STGD8NC60KT4
| Parameters | |
|---|---|
| Mount | Surface Mount |
| Mounting Type | Surface Mount |
| Package / Case | TO-252-3, DPak (2 Leads + Tab), SC-63 |
| Operating Temperature | -55°C~150°C TJ |
| Packaging | Tape & Reel (TR) |
| Series | PowerMESH™ |
| JESD-609 Code | e3 |
| Part Status | Obsolete |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| ECCN Code | EAR99 |
| Terminal Finish | Matte Tin (Sn) |
| Subcategory | Insulated Gate BIP Transistors |
| Max Power Dissipation | 62W |
| Peak Reflow Temperature (Cel) | 225 |
| Base Part Number | STGD8 |
| Element Configuration | Single |
| Input Type | Standard |
| Power - Max | 62W |
| Polarity/Channel Type | N-CHANNEL |
| Collector Emitter Voltage (VCEO) | 600V |
| Max Collector Current | 15A |
| Collector Emitter Breakdown Voltage | 600V |
| Max Breakdown Voltage | 600V |
| Test Condition | 390V, 3A, 10 Ω, 15V |
| Vce(on) (Max) @ Vge, Ic | 2.75V @ 15V, 3A |
| Gate Charge | 19nC |
| Current - Collector Pulsed (Icm) | 30A |
| Td (on/off) @ 25°C | 17ns/72ns |
| Switching Energy | 55μJ (on), 85μJ (off) |
| Gate-Emitter Voltage-Max | 20V |
| Gate-Emitter Thr Voltage-Max | 6.5V |
| Radiation Hardening | No |
| RoHS Status | ROHS3 Compliant |
See Relate Datesheet