STGB35N35LZ-1
| Parameters | |
|---|---|
| Mount | Through Hole |
| Mounting Type | Through Hole |
| Package / Case | TO-262-3 Long Leads, I2Pak, TO-262AA |
| Number of Pins | 3 |
| Transistor Element Material | SILICON |
| Operating Temperature | -55°C~175°C TJ |
| Packaging | Tube |
| Series | PowerMESH™ |
| Part Status | Obsolete |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 3 |
| ECCN Code | EAR99 |
| Additional Feature | VOLTAGE CLAMPING |
| Subcategory | Insulated Gate BIP Transistors |
| Max Power Dissipation | 176W |
| Base Part Number | STGB35 |
| Pin Count | 3 |
| Number of Elements | 1 |
| Element Configuration | Single |
| Case Connection | COLLECTOR |
| Input Type | Logic |
| Power - Max | 176W |
| Transistor Application | POWER CONTROL |
| Polarity/Channel Type | N-CHANNEL |
| Collector Emitter Voltage (VCEO) | 380V |
| Max Collector Current | 40A |
| Collector Emitter Breakdown Voltage | 345V |
| Turn On Time | 7600 ns |
| Test Condition | 300V, 15A, 5V |
| Vce(on) (Max) @ Vge, Ic | 1.7V @ 4.5V, 15A |
| Turn Off Time-Nom (toff) | 37000 ns |
| Gate Charge | 49nC |
| Current - Collector Pulsed (Icm) | 80A |
| Td (on/off) @ 25°C | 1.1μs/26.5μs |
| Gate-Emitter Voltage-Max | 12V |
| Radiation Hardening | No |
| RoHS Status | ROHS3 Compliant |
See Relate Datesheet