STGB19NC60KDT4
| Parameters | |
|---|---|
| Mounting Type | Surface Mount |
| Package / Case | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
| RoHS Status | ROHS3 Compliant |
| Number of Pins | 3 |
| Transistor Element Material | SILICON |
| Operating Temperature | -55°C~150°C TJ |
| Packaging | Tape & Reel (TR) |
| Series | PowerMESH™ |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 2 |
| ECCN Code | EAR99 |
| Subcategory | Insulated Gate BIP Transistors |
| Max Power Dissipation | 125W |
| Terminal Form | GULL WING |
| Base Part Number | STGB19 |
| Pin Count | 4 |
| JESD-30 Code | R-PSSO-G2 |
| Number of Elements | 1 |
| Element Configuration | Single |
| Input Type | Standard |
| Power - Max | 125W |
| Transistor Application | POWER CONTROL |
| Polarity/Channel Type | N-CHANNEL |
| Collector Emitter Voltage (VCEO) | 600V |
| Max Collector Current | 35A |
| Reverse Recovery Time | 31 ns |
| Collector Emitter Breakdown Voltage | 600V |
| Max Breakdown Voltage | 600V |
| Turn On Time | 38 ns |
| Test Condition | 480V, 12A, 10 Ω, 15V |
| Vce(on) (Max) @ Vge, Ic | 2.75V @ 15V, 12A |
| Turn Off Time-Nom (toff) | 270 ns |
| Gate Charge | 55nC |
| Current - Collector Pulsed (Icm) | 75A |
| Td (on/off) @ 25°C | 30ns/105ns |
| Switching Energy | 165μJ (on), 255μJ (off) |
| Gate-Emitter Voltage-Max | 20V |
| Factory Lead Time | 8 Weeks |
| Lifecycle Status | ACTIVE (Last Updated: 7 months ago) |
| Gate-Emitter Thr Voltage-Max | 6.5V |
| Contact Plating | Tin |
| Mount | Surface Mount |
| Radiation Hardening | No |
See Relate Datesheet