STF13NM60N
| Parameters | |
|---|---|
| Input Capacitance (Ciss) (Max) @ Vds | 790pF @ 50V |
| Current - Continuous Drain (Id) @ 25°C | 11A Tc |
| Gate Charge (Qg) (Max) @ Vgs | 30nC @ 10V |
| Rise Time | 8ns |
| Drive Voltage (Max Rds On,Min Rds On) | 10V |
| Vgs (Max) | ±25V |
| Fall Time (Typ) | 10 ns |
| Turn-Off Delay Time | 30 ns |
| Continuous Drain Current (ID) | 5.5A |
| JEDEC-95 Code | TO-220AB |
| Factory Lead Time | 16 Weeks |
| Lifecycle Status | ACTIVE (Last Updated: 8 months ago) |
| Mount | Through Hole |
| Mounting Type | Through Hole |
| Gate to Source Voltage (Vgs) | 25V |
| Package / Case | TO-220-3 Full Pack |
| Number of Pins | 3 |
| Transistor Element Material | SILICON |
| Drain to Source Breakdown Voltage | 600V |
| Manufacturer Package Identifier | TO-220FP-7012510 |
| Operating Temperature | -55°C~150°C TJ |
| Packaging | Tube |
| Pulsed Drain Current-Max (IDM) | 44A |
| Series | MDmesh™ II |
| JESD-609 Code | e3 |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Avalanche Energy Rating (Eas) | 200 mJ |
| Number of Terminations | 3 |
| ECCN Code | EAR99 |
| Resistance | 280mOhm |
| Max Junction Temperature (Tj) | 150°C |
| Terminal Finish | Matte Tin (Sn) - annealed |
| Nominal Vgs | 3 V |
| Subcategory | FET General Purpose Power |
| Technology | MOSFET (Metal Oxide) |
| Height | 20mm |
| Base Part Number | STF13 |
| Length | 10.4mm |
| Pin Count | 3 |
| Number of Elements | 1 |
| Width | 4.6mm |
| Number of Channels | 1 |
| Radiation Hardening | No |
| Power Dissipation-Max | 25W Tc |
| Element Configuration | Single |
| REACH SVHC | No SVHC |
| Operating Mode | ENHANCEMENT MODE |
| RoHS Status | ROHS3 Compliant |
| Power Dissipation | 25W |
| Case Connection | ISOLATED |
| Lead Free | Lead Free |
| Turn On Delay Time | 3 ns |
| FET Type | N-Channel |
| Transistor Application | SWITCHING |
| Rds On (Max) @ Id, Vgs | 360m Ω @ 5.5A, 10V |
| Vgs(th) (Max) @ Id | 4V @ 250μA |
See Relate Datesheet