STD5NM50T4
| Parameters | |
|---|---|
| Additional Feature | AVALANCHE RATED |
| Subcategory | FET General Purpose Power |
| Voltage - Rated DC | 500V |
| Technology | MOSFET (Metal Oxide) |
| Terminal Form | GULL WING |
| Peak Reflow Temperature (Cel) | 260 |
| Current Rating | 7.5A |
| Time@Peak Reflow Temperature-Max (s) | 30 |
| Base Part Number | STD5N |
| Pin Count | 3 |
| JESD-30 Code | R-PSSO-G2 |
| Number of Elements | 1 |
| Power Dissipation-Max | 100W Tc |
| Element Configuration | Single |
| Operating Mode | ENHANCEMENT MODE |
| Power Dissipation | 100W |
| Turn On Delay Time | 16 ns |
| FET Type | N-Channel |
| Transistor Application | SWITCHING |
| Rds On (Max) @ Id, Vgs | 800m Ω @ 2.5A, 10V |
| Vgs(th) (Max) @ Id | 5V @ 250μA |
| Mount | Surface Mount |
| Mounting Type | Surface Mount |
| Input Capacitance (Ciss) (Max) @ Vds | 415pF @ 25V |
| Current - Continuous Drain (Id) @ 25°C | 7.5A Tc |
| Package / Case | TO-252-3, DPak (2 Leads + Tab), SC-63 |
| Gate Charge (Qg) (Max) @ Vgs | 13nC @ 10V |
| Rise Time | 8ns |
| Number of Pins | 3 |
| Drive Voltage (Max Rds On,Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Weight | 4.535924g |
| Fall Time (Typ) | 6 ns |
| Continuous Drain Current (ID) | 7.5A |
| Transistor Element Material | SILICON |
| Threshold Voltage | 4V |
| Operating Temperature | -55°C~150°C TJ |
| JEDEC-95 Code | TO-252AA |
| Packaging | Cut Tape (CT) |
| Gate to Source Voltage (Vgs) | 30V |
| Drain Current-Max (Abs) (ID) | 5A |
| Drain to Source Breakdown Voltage | 500V |
| Series | MDmesh™ |
| Height | 2.4mm |
| JESD-609 Code | e3 |
| Length | 6.6mm |
| Part Status | Active |
| Width | 6.2mm |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Radiation Hardening | No |
| REACH SVHC | No SVHC |
| Number of Terminations | 2 |
| RoHS Status | ROHS3 Compliant |
| Lead Free | Lead Free |
| ECCN Code | EAR99 |
| Resistance | 800mOhm |
| Terminal Finish | Matte Tin (Sn) |
See Relate Datesheet