 
    | Parameters | |
|---|---|
| Factory Lead Time | 12 Weeks | 
| Lifecycle Status | ACTIVE (Last Updated: 8 months ago) | 
| Mount | Through Hole | 
| Mounting Type | Through Hole | 
| Package / Case | TO-251-3 Short Leads, IPak, TO-251AA | 
| Number of Pins | 3 | 
| Transistor Element Material | SILICON | 
| Operating Temperature | -55°C~150°C TJ | 
| Packaging | Tube | 
| Series | SuperMESH™ | 
| JESD-609 Code | e3 | 
| Part Status | Active | 
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) | 
| Number of Terminations | 3 | 
| ECCN Code | EAR99 | 
| Resistance | 6.5Ohm | 
| Terminal Finish | Tin (Sn) | 
| Additional Feature | AVALANCHE RATED | 
| Subcategory | FET General Purpose Power | 
| Technology | MOSFET (Metal Oxide) | 
| Peak Reflow Temperature (Cel) | 260 | 
| Time@Peak Reflow Temperature-Max (s) | 30 | 
| Base Part Number | STD2N | 
| Pin Count | 3 | 
| Number of Elements | 1 | 
| Power Dissipation-Max | 70W Tc | 
| Element Configuration | Single | 
| Operating Mode | ENHANCEMENT MODE | 
| Power Dissipation | 70W | 
| Turn On Delay Time | 21 ns | 
| FET Type | N-Channel | 
| Transistor Application | SWITCHING | 
| Rds On (Max) @ Id, Vgs | 6.5 Ω @ 1.05A, 10V | 
| Vgs(th) (Max) @ Id | 4.5V @ 50μA | 
| Input Capacitance (Ciss) (Max) @ Vds | 485pF @ 25V | 
| Current - Continuous Drain (Id) @ 25°C | 2.1A Tc | 
| Gate Charge (Qg) (Max) @ Vgs | 27nC @ 10V | 
| Rise Time | 11ns | 
| Drive Voltage (Max Rds On,Min Rds On) | 10V | 
| Vgs (Max) | ±30V | 
| Fall Time (Typ) | 40 ns | 
| Turn-Off Delay Time | 43 ns | 
| Continuous Drain Current (ID) | 2.1A | 
| Threshold Voltage | 3.75V | 
| Gate to Source Voltage (Vgs) | 30V | 
| Drain to Source Breakdown Voltage | 900V | 
| Pulsed Drain Current-Max (IDM) | 8.4A | 
| Radiation Hardening | No | 
| REACH SVHC | No SVHC | 
| RoHS Status | ROHS3 Compliant | 
| Lead Free | Lead Free |