STB28N65M2
| Parameters | |
|---|---|
| Factory Lead Time | 26 Weeks |
| Lifecycle Status | ACTIVE (Last Updated: 7 months ago) |
| Mount | Surface Mount |
| Mounting Type | Surface Mount |
| Package / Case | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
| Number of Pins | 3 |
| Transistor Element Material | SILICON |
| Operating Temperature | 150°C TJ |
| Packaging | Cut Tape (CT) |
| Series | MDmesh™ M2 |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 2 |
| ECCN Code | EAR99 |
| HTS Code | 8541.29.00.95 |
| Subcategory | FET General Purpose Power |
| Technology | MOSFET (Metal Oxide) |
| Terminal Form | GULL WING |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED |
| Base Part Number | STB28N |
| JESD-30 Code | R-PSSO-G2 |
| Number of Elements | 1 |
| Power Dissipation-Max | 170W Tc |
| Element Configuration | Single |
| Operating Mode | ENHANCEMENT MODE |
| Case Connection | DRAIN |
| Turn On Delay Time | 13.4 ns |
| FET Type | N-Channel |
| Transistor Application | SWITCHING |
| Rds On (Max) @ Id, Vgs | 180m Ω @ 10A, 10V |
| Vgs(th) (Max) @ Id | 4V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds | 1440pF @ 100V |
| Current - Continuous Drain (Id) @ 25°C | 20A Tc |
| Gate Charge (Qg) (Max) @ Vgs | 35nC @ 10V |
| Drain to Source Voltage (Vdss) | 650V |
| Drive Voltage (Max Rds On,Min Rds On) | 10V |
| Vgs (Max) | ±25V |
| Turn-Off Delay Time | 59 ns |
| Continuous Drain Current (ID) | 20A |
| Gate to Source Voltage (Vgs) | 25V |
| Drain-source On Resistance-Max | 0.18Ohm |
| Pulsed Drain Current-Max (IDM) | 80A |
| DS Breakdown Voltage-Min | 650V |
| Avalanche Energy Rating (Eas) | 760 mJ |
| Height | 4.6mm |
| Length | 10.4mm |
| Width | 9.35mm |
| RoHS Status | ROHS3 Compliant |
See Relate Datesheet