STB20N65M5
| Parameters | |
|---|---|
| Factory Lead Time | 17 Weeks |
| Lifecycle Status | ACTIVE (Last Updated: 7 months ago) |
| Mount | Surface Mount |
| Mounting Type | Surface Mount |
| Package / Case | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
| Number of Pins | 3 |
| Transistor Element Material | SILICON |
| Operating Temperature | 150°C TJ |
| Packaging | Tape & Reel (TR) |
| Series | MDmesh™ V |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 2 |
| ECCN Code | EAR99 |
| Resistance | 190MOhm |
| Technology | MOSFET (Metal Oxide) |
| Terminal Form | GULL WING |
| Base Part Number | STB20N |
| JESD-30 Code | R-PSSO-G2 |
| Number of Elements | 1 |
| Power Dissipation-Max | 130W Tc |
| Element Configuration | Single |
| Operating Mode | ENHANCEMENT MODE |
| Case Connection | DRAIN |
| FET Type | N-Channel |
| Transistor Application | SWITCHING |
| Rds On (Max) @ Id, Vgs | 190m Ω @ 9A, 10V |
| Vgs(th) (Max) @ Id | 5V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds | 1434pF @ 100V |
| Current - Continuous Drain (Id) @ 25°C | 18A Tc |
| Gate Charge (Qg) (Max) @ Vgs | 36nC @ 10V |
| Rise Time | 7.5ns |
| Drain to Source Voltage (Vdss) | 650V |
| Drive Voltage (Max Rds On,Min Rds On) | 10V |
| Vgs (Max) | ±25V |
| Fall Time (Typ) | 7.5 ns |
| Continuous Drain Current (ID) | 18A |
| Gate to Source Voltage (Vgs) | 25V |
| Drain to Source Breakdown Voltage | 710V |
| Pulsed Drain Current-Max (IDM) | 72A |
| Avalanche Energy Rating (Eas) | 270 mJ |
| Radiation Hardening | No |
| RoHS Status | ROHS3 Compliant |
| Lead Free | Lead Free |
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