| Parameters | |
|---|---|
| Factory Lead Time | 16 Weeks |
| Mount | Surface Mount |
| Mounting Type | Surface Mount |
| Package / Case | SOT-23-3 Flat Leads |
| Number of Pins | 3 |
| Transistor Element Material | SILICON |
| Operating Temperature | 150°C TJ |
| Packaging | Digi-Reel® |
| Published | 2009 |
| Series | U-MOSVI |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 3 |
| Technology | MOSFET (Metal Oxide) |
| Terminal Position | DUAL |
| Number of Elements | 1 |
| Number of Channels | 1 |
| Power Dissipation-Max | 1W Ta |
| Element Configuration | Single |
| Operating Mode | ENHANCEMENT MODE |
| Power Dissipation | 2W |
| Turn On Delay Time | 32 ns |
| FET Type | P-Channel |
| Transistor Application | SWITCHING |
| Rds On (Max) @ Id, Vgs | 29.8m Ω @ 3A, 4.5V |
| Vgs(th) (Max) @ Id | 1V @ 1mA |
| Input Capacitance (Ciss) (Max) @ Vds | 840pF @ 10V |
| Current - Continuous Drain (Id) @ 25°C | 6A Ta |
| Gate Charge (Qg) (Max) @ Vgs | 12.8nC @ 4.5V |
| Drain to Source Voltage (Vdss) | 20V |
| Drive Voltage (Max Rds On,Min Rds On) | 1.5V 4.5V |
| Vgs (Max) | ±8V |
| Turn-Off Delay Time | 107 ns |
| Continuous Drain Current (ID) | 6A |
| Gate to Source Voltage (Vgs) | 8V |
| Drain Current-Max (Abs) (ID) | 6A |
| Drain-source On Resistance-Max | 0.0298Ohm |
| Drain to Source Breakdown Voltage | -20V |
| Pulsed Drain Current-Max (IDM) | 24A |
| Radiation Hardening | No |
| RoHS Status | RoHS Compliant |