| Parameters | |
|---|---|
| Terminal Finish | Tin (Sn) |
| Max Operating Temperature | 125°C |
| Min Operating Temperature | -65°C |
| Additional Feature | LOGIC LEVEL COMPATIBLE |
| Subcategory | FET General Purpose Power |
| Voltage - Rated DC | 30V |
| Max Power Dissipation | 1.1W |
| Terminal Position | DUAL |
| Terminal Form | GULL WING |
| Current Rating | 1A |
| Base Part Number | SS13 |
| JESD-30 Code | R-PDSO-G3 |
| Number of Elements | 1 |
| Polarity | Standard |
| Element Configuration | Single |
| Speed | Fast Recovery =< 500ns, > 200mA (Io) |
| Diode Type | Schottky |
| Current - Reverse Leakage @ Vr | 200μA @ 30V |
| Operating Mode | ENHANCEMENT MODE |
| Output Current | 1A |
| Voltage - Forward (Vf) (Max) @ If | 500mV @ 1A |
| Forward Current | 1A |
| Max Reverse Leakage Current | 200μA |
| Operating Temperature - Junction | -65°C~125°C |
| Max Surge Current | 40A |
| Transistor Application | SWITCHING |
| Forward Voltage | 500mV |
| Max Reverse Voltage (DC) | 30V |
| Average Rectified Current | 1A |
| Peak Reverse Current | 200μA |
| Max Repetitive Reverse Voltage (Vrrm) | 30V |
| Peak Non-Repetitive Surge Current | 40A |
| Drain-source On Resistance-Max | 6Ohm |
| DS Breakdown Voltage-Min | 50V |
| FET Technology | METAL-OXIDE SEMICONDUCTOR |
| Max Forward Surge Current (Ifsm) | 40A |
| Factory Lead Time | 8 Weeks |
| Height | 2.2mm |
| Length | 4.75mm |
| Width | 2.95mm |
| Lifecycle Status | ACTIVE (Last Updated: 6 days ago) |
| Radiation Hardening | No |
| Mount | Surface Mount |
| REACH SVHC | No SVHC |
| RoHS Status | ROHS3 Compliant |
| Mounting Type | Surface Mount |
| Lead Free | Lead Free |
| Package / Case | DO-214AC, SMA |
| Number of Pins | 2 |
| Weight | 106mg |
| Packaging | Tape & Reel (TR) |
| Published | 2013 |
| JESD-609 Code | e3 |
| Pbfree Code | yes |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 3 |
| ECCN Code | EAR99 |
See Relate Datesheet