SPU07N60S5
| Parameters | |
|---|---|
| Factory Lead Time | 10 Weeks |
| Contact Plating | Tin |
| Mounting Type | Through Hole |
| Package / Case | TO-251-3 Short Leads, IPak, TO-251AA |
| Surface Mount | NO |
| Number of Pins | 3 |
| Transistor Element Material | SILICON |
| Operating Temperature | -55°C~150°C TJ |
| Packaging | Tube |
| Published | 2005 |
| Series | CoolMOS™ |
| JESD-609 Code | e3 |
| Pbfree Code | yes |
| Part Status | Obsolete |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 3 |
| Additional Feature | AVALANCHE RATED, HIGH VOLTAGE |
| Subcategory | FET General Purpose Power |
| Voltage - Rated DC | 600V |
| Technology | MOSFET (Metal Oxide) |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED |
| Current Rating | 7.3A |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED |
| Pin Count | 3 |
| Qualification Status | Not Qualified |
| Number of Elements | 1 |
| Power Dissipation-Max | 83W Tc |
| Element Configuration | Single |
| Operating Mode | ENHANCEMENT MODE |
| Power Dissipation | 83W |
| Turn On Delay Time | 120 ns |
| FET Type | N-Channel |
| Transistor Application | SWITCHING |
| Rds On (Max) @ Id, Vgs | 600m Ω @ 4.6A, 10V |
| Vgs(th) (Max) @ Id | 5.5V @ 350μA |
| Input Capacitance (Ciss) (Max) @ Vds | 970pF @ 25V |
| Current - Continuous Drain (Id) @ 25°C | 7.3A Tc |
| Gate Charge (Qg) (Max) @ Vgs | 35nC @ 10V |
| Rise Time | 40ns |
| Drive Voltage (Max Rds On,Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Fall Time (Typ) | 20 ns |
| Turn-Off Delay Time | 170 ns |
| Continuous Drain Current (ID) | 7.3A |
| Gate to Source Voltage (Vgs) | 20V |
| Drain-source On Resistance-Max | 0.6Ohm |
| Drain to Source Breakdown Voltage | 600V |
| Pulsed Drain Current-Max (IDM) | 14.6A |
| RoHS Status | RoHS Compliant |
| Lead Free | Lead Free |
See Relate Datesheet