| Parameters | |
|---|---|
| Turn On Delay Time | 10 ns |
| FET Type | N-Channel |
| Rds On (Max) @ Id, Vgs | 190mOhm @ 13.1A, 10V |
| Vgs(th) (Max) @ Id | 3.9V @ 1mA |
| Input Capacitance (Ciss) (Max) @ Vds | 2400pF @ 25V |
| Current - Continuous Drain (Id) @ 25°C | 20.7A Tc |
| Gate Charge (Qg) (Max) @ Vgs | 114nC @ 10V |
| Rise Time | 5ns |
| Drain to Source Voltage (Vdss) | 600V |
| Drive Voltage (Max Rds On,Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Fall Time (Typ) | 4.5 ns |
| Turn-Off Delay Time | 67 ns |
| Continuous Drain Current (ID) | 20.7A |
| Threshold Voltage | 3V |
| Gate to Source Voltage (Vgs) | 20V |
| Drain to Source Breakdown Voltage | 600V |
| Dual Supply Voltage | 650V |
| Input Capacitance | 2.4nF |
| Drain to Source Resistance | 190mOhm |
| Rds On Max | 190 mΩ |
| Nominal Vgs | 3 V |
| Height | 9.25mm |
| Length | 10mm |
| Width | 4.4mm |
| REACH SVHC | No SVHC |
| RoHS Status | ROHS3 Compliant |
| Lead Free | Lead Free |
| Factory Lead Time | 8 Weeks |
| Contact Plating | Tin |
| Mounting Type | Through Hole |
| Package / Case | TO-220-3 |
| Number of Pins | 3 |
| Supplier Device Package | PG-TO220-3-1 |
| Weight | 45.359237g |
| Operating Temperature | -55°C~150°C TJ |
| Packaging | Tube |
| Published | 2005 |
| Series | CoolMOS™ |
| Part Status | Not For New Designs |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Termination | Through Hole |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Voltage - Rated DC | 650V |
| Technology | MOSFET (Metal Oxide) |
| Current Rating | 20.7A |
| Power Dissipation-Max | 208W Tc |
| Element Configuration | Single |
| Power Dissipation | 208W |