SPD08N50C3ATMA1
| Parameters | |
|---|---|
| Factory Lead Time | 8 Weeks |
| Contact Plating | Tin |
| Mount | Surface Mount |
| Mounting Type | Surface Mount |
| Package / Case | TO-252-3, DPak (2 Leads + Tab), SC-63 |
| Number of Pins | 3 |
| Supplier Device Package | PG-TO252-3-1 |
| Operating Temperature | -55°C~150°C TJ |
| Packaging | Tape & Reel (TR) |
| Published | 2005 |
| Series | CoolMOS™ |
| Part Status | Not For New Designs |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Termination | SMD/SMT |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Voltage - Rated DC | 560V |
| Technology | MOSFET (Metal Oxide) |
| Current Rating | 7.6A |
| Number of Elements | 1 |
| Power Dissipation-Max | 83W Tc |
| Element Configuration | Single |
| Power Dissipation | 83W |
| Turn On Delay Time | 6 ns |
| FET Type | N-Channel |
| Rds On (Max) @ Id, Vgs | 600mOhm @ 4.6A, 10V |
| Vgs(th) (Max) @ Id | 3.9V @ 350μA |
| Input Capacitance (Ciss) (Max) @ Vds | 750pF @ 25V |
| Current - Continuous Drain (Id) @ 25°C | 7.6A Tc |
| Gate Charge (Qg) (Max) @ Vgs | 32nC @ 10V |
| Rise Time | 5ns |
| Drain to Source Voltage (Vdss) | 500V |
| Drive Voltage (Max Rds On,Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Fall Time (Typ) | 7 ns |
| Turn-Off Delay Time | 60 ns |
| Continuous Drain Current (ID) | 7.6A |
| Threshold Voltage | 3V |
| Gate to Source Voltage (Vgs) | 20V |
| Drain to Source Breakdown Voltage | 500V |
| Dual Supply Voltage | 560V |
| Input Capacitance | 750pF |
| Drain to Source Resistance | 600mOhm |
| Rds On Max | 600 mΩ |
| Nominal Vgs | 3 V |
| Height | 2.41mm |
| Length | 6.73mm |
| Width | 6.22mm |
| Radiation Hardening | No |
| REACH SVHC | No SVHC |
| RoHS Status | ROHS3 Compliant |
| Lead Free | Lead Free |
See Relate Datesheet