SMBTA14E6327HTSA1

SMBTA14E6327HTSA1

SMBTA14E6327HTSA1 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Infineon Technologies stock available at Feilidi


  • Manufacturer: Infineon Technologies
  • Origchip NO: 376-SMBTA14E6327HTSA1
  • Package: TO-236-3, SC-59, SOT-23-3
  • Datasheet: PDF
  • Stock: 551
  • Description: SMBTA14E6327HTSA1 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Infineon Technologies stock available at Feilidi (Kg)

Details

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Parameters
Current - Collector Cutoff (Max) 100nA ICBO
Vce Saturation (Max) @ Ib, Ic 1.5V @ 100μA, 100mA
Collector Emitter Breakdown Voltage 30V
Transition Frequency 125MHz
Collector Emitter Saturation Voltage 1.5V
Max Breakdown Voltage 30V
Frequency - Transition 125MHz
Collector Base Voltage (VCBO) 30V
Emitter Base Voltage (VEBO) 10V
hFE Min 20000
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Factory Lead Time 26 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3
Number of Pins 3
Transistor Element Material SILICON
Operating Temperature 150°C TJ
Packaging Tape & Reel (TR)
Published 2011
JESD-609 Code e3
Pbfree Code yes
Part Status Not For New Designs
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Tin (Sn)
Voltage - Rated DC 30V
Max Power Dissipation 330mW
Terminal Position DUAL
Terminal Form GULL WING
Current Rating 300mA
Base Part Number MBTA14
Number of Elements 1
Polarity NPN
Element Configuration Single
Halogen Free Not Halogen Free
Transistor Type NPN - Darlington
Collector Emitter Voltage (VCEO) 1.5V
Max Collector Current 300mA
DC Current Gain (hFE) (Min) @ Ic, Vce 20000 @ 100mA 5V
See Relate Datesheet

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