SIHB12N60E-GE3
| Parameters | |
|---|---|
| Operating Temperature | -55°C~150°C TJ |
| Packaging | Bulk |
| Published | 2013 |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 2 |
| Resistance | 380MOhm |
| Additional Feature | AVALANCHE RATED |
| Subcategory | FET General Purpose Powers |
| Technology | MOSFET (Metal Oxide) |
| Terminal Form | GULL WING |
| Pin Count | 4 |
| JESD-30 Code | R-PSSO-G2 |
| Number of Elements | 1 |
| Number of Channels | 1 |
| Power Dissipation-Max | 147W Tc |
| Element Configuration | Single |
| Operating Mode | ENHANCEMENT MODE |
| Power Dissipation | 147W |
| Turn On Delay Time | 14 ns |
| FET Type | N-Channel |
| Transistor Application | SWITCHING |
| Rds On (Max) @ Id, Vgs | 380m Ω @ 6A, 10V |
| Vgs(th) (Max) @ Id | 4V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds | 937pF @ 100V |
| Current - Continuous Drain (Id) @ 25°C | 12A Tc |
| Gate Charge (Qg) (Max) @ Vgs | 58nC @ 10V |
| Rise Time | 38ns |
| Drain to Source Voltage (Vdss) | 600V |
| Drive Voltage (Max Rds On,Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Fall Time (Typ) | 38 ns |
| Turn-Off Delay Time | 35 ns |
| Continuous Drain Current (ID) | 12A |
| Threshold Voltage | 2V |
| Gate to Source Voltage (Vgs) | 20V |
| Pulsed Drain Current-Max (IDM) | 27A |
| DS Breakdown Voltage-Min | 600V |
| Height | 4.83mm |
| Length | 10.67mm |
| Width | 9.65mm |
| Radiation Hardening | No |
| REACH SVHC | Unknown |
| RoHS Status | ROHS3 Compliant |
| Lead Free | Lead Free |
| Factory Lead Time | 14 Weeks |
| Mount | Surface Mount |
| Mounting Type | Surface Mount |
| Package / Case | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
| Number of Pins | 3 |
| Weight | 1.437803g |
| Transistor Element Material | SILICON |
See Relate Datesheet