SI8810EDB-T2-E1
| Parameters | |
|---|---|
| Factory Lead Time | 21 Weeks |
| Contact Plating | Tin |
| Mount | Surface Mount |
| Mounting Type | Surface Mount |
| Package / Case | 4-XFBGA |
| Number of Pins | 4 |
| Operating Temperature | -55°C~150°C TJ |
| Packaging | Cut Tape (CT) |
| Published | 2016 |
| Series | TrenchFET® |
| JESD-609 Code | e3 |
| Pbfree Code | yes |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| ECCN Code | EAR99 |
| Technology | MOSFET (Metal Oxide) |
| Peak Reflow Temperature (Cel) | 260 |
| Time@Peak Reflow Temperature-Max (s) | 30 |
| Number of Elements | 1 |
| Power Dissipation-Max | 500mW Ta |
| Power Dissipation | 900mW |
| FET Type | N-Channel |
| Rds On (Max) @ Id, Vgs | 72m Ω @ 1A, 4.5V |
| Vgs(th) (Max) @ Id | 900mV @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds | 245pF @ 10V |
| Gate Charge (Qg) (Max) @ Vgs | 8nC @ 8V |
| Rise Time | 12ns |
| Drive Voltage (Max Rds On,Min Rds On) | 1.5V 4.5V |
| Vgs (Max) | ±8V |
| Fall Time (Typ) | 7 ns |
| Turn-Off Delay Time | 25 ns |
| Continuous Drain Current (ID) | 2.1A |
| Gate to Source Voltage (Vgs) | 8V |
| Drain to Source Breakdown Voltage | 20V |
| Radiation Hardening | No |
| RoHS Status | ROHS3 Compliant |
See Relate Datesheet