SI7456DDP-T1-GE3

SI7456DDP-T1-GE3

VISHAY SI7456DDP-T1-GE3 MOSFET Transistor, N Channel, 27.8 A, 100 V, 0.017 ohm, 10 V, 1.5 V


  • Manufacturer: Vishay Siliconix
  • Origchip NO: 880-SI7456DDP-T1-GE3
  • Package: PowerPAK® SO-8
  • Datasheet: PDF
  • Stock: 509
  • Description: VISHAY SI7456DDP-T1-GE3 MOSFET Transistor, N Channel, 27.8 A, 100 V, 0.017 ohm, 10 V, 1.5 V (Kg)

Details

Tags

Parameters
JESD-30 Code R-PDSO-C5
Number of Elements 1
Power Dissipation-Max 5W Ta 35.7W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 5W
Case Connection DRAIN
Turn On Delay Time 13 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 23m Ω @ 10A, 10V
Vgs(th) (Max) @ Id 2.8V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 900pF @ 50V
Current - Continuous Drain (Id) @ 25°C 27.8A Tc
Gate Charge (Qg) (Max) @ Vgs 29.5nC @ 10V
Rise Time 14ns
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Vgs (Max) ±20V
Fall Time (Typ) 10 ns
Turn-Off Delay Time 19 ns
Continuous Drain Current (ID) 27.8A
Threshold Voltage 1.5V
Gate to Source Voltage (Vgs) 20V
Drain to Source Breakdown Voltage 100V
Pulsed Drain Current-Max (IDM) 70A
Height 1.12mm
Length 6.25mm
Width 5.26mm
Radiation Hardening No
REACH SVHC Unknown
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Factory Lead Time 14 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case PowerPAK® SO-8
Number of Pins 8
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2014
Series TrenchFET®
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 5
ECCN Code EAR99
Resistance 42MOhm
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Terminal Form C BEND
See Relate Datesheet

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