SI4946BEY-T1-GE3
| Parameters | |
|---|---|
| Number of Pins | 8 |
| Weight | 506.605978mg |
| Transistor Element Material | SILICON |
| Operating Temperature | -55°C~175°C TJ |
| Packaging | Tape & Reel (TR) |
| Published | 2013 |
| Series | TrenchFET® |
| JESD-609 Code | e3 |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 8 |
| ECCN Code | EAR99 |
| Resistance | 41MOhm |
| Terminal Finish | MATTE TIN |
| Max Power Dissipation | 3.7W |
| Terminal Form | GULL WING |
| Peak Reflow Temperature (Cel) | 260 |
| Time@Peak Reflow Temperature-Max (s) | 30 |
| Base Part Number | SI4946 |
| Pin Count | 8 |
| Number of Elements | 2 |
| Element Configuration | Dual |
| Operating Mode | ENHANCEMENT MODE |
| Power Dissipation | 2.4W |
| Turn On Delay Time | 10 ns |
| FET Type | 2 N-Channel (Dual) |
| Rds On (Max) @ Id, Vgs | 41m Ω @ 5.3A, 10V |
| Vgs(th) (Max) @ Id | 3V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds | 840pF @ 30V |
| Current - Continuous Drain (Id) @ 25°C | 6.5A |
| Gate Charge (Qg) (Max) @ Vgs | 25nC @ 10V |
| Rise Time | 12ns |
| Fall Time (Typ) | 10 ns |
| Turn-Off Delay Time | 25 ns |
| Continuous Drain Current (ID) | 5.3A |
| Threshold Voltage | 2.4V |
| Gate to Source Voltage (Vgs) | 20V |
| Drain to Source Breakdown Voltage | 60V |
| Pulsed Drain Current-Max (IDM) | 30A |
| FET Technology | METAL-OXIDE SEMICONDUCTOR |
| FET Feature | Logic Level Gate |
| Height | 1.55mm |
| Length | 5mm |
| Width | 4mm |
| Radiation Hardening | No |
| REACH SVHC | No SVHC |
| RoHS Status | ROHS3 Compliant |
| Lead Free | Lead Free |
| Factory Lead Time | 14 Weeks |
| Mount | Surface Mount |
| Mounting Type | Surface Mount |
| Package / Case | 8-SOIC (0.154, 3.90mm Width) |
See Relate Datesheet