SI3424DV-T1-E3
| Parameters | |
|---|---|
| Mount | Surface Mount |
| Mounting Type | Surface Mount |
| Package / Case | SOT-23-6 Thin, TSOT-23-6 |
| Number of Pins | 6 |
| Packaging | Cut Tape (CT) |
| Published | 2008 |
| Series | TrenchFET® |
| JESD-609 Code | e3 |
| Pbfree Code | yes |
| Part Status | Obsolete |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 6 |
| ECCN Code | EAR99 |
| Resistance | 28mOhm |
| Terminal Finish | MATTE TIN |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Subcategory | FET General Purpose Power |
| Max Power Dissipation | 1.14W |
| Technology | MOSFET (Metal Oxide) |
| Terminal Position | DUAL |
| Terminal Form | GULL WING |
| Peak Reflow Temperature (Cel) | 260 |
| Time@Peak Reflow Temperature-Max (s) | 40 |
| Pin Count | 6 |
| Number of Elements | 1 |
| Element Configuration | Single |
| Operating Mode | ENHANCEMENT MODE |
| Power Dissipation | 1.14W |
| Turn On Delay Time | 7 ns |
| FET Type | N-Channel |
| Rds On (Max) @ Id, Vgs | 28m Ω @ 6.7A, 10V |
| Vgs(th) (Max) @ Id | 800mV @ 250μA (Min) |
| Current - Continuous Drain (Id) @ 25°C | 5A Ta |
| Gate Charge (Qg) (Max) @ Vgs | 18nC @ 10V |
| Rise Time | 10ns |
| Fall Time (Typ) | 10 ns |
| Turn-Off Delay Time | 20 ns |
| Continuous Drain Current (ID) | 5A |
| Threshold Voltage | 800mV |
| Gate to Source Voltage (Vgs) | 20V |
| Drain Current-Max (Abs) (ID) | 5A |
| Drain to Source Breakdown Voltage | 30V |
| Nominal Vgs | 800 mV |
| Radiation Hardening | No |
| REACH SVHC | Unknown |
| RoHS Status | ROHS3 Compliant |
| Lead Free | Lead Free |
See Relate Datesheet