SI1417EDH-T1-E3
| Parameters | |
|---|---|
| Nominal Vgs | -450 mV |
| Height | 900μm |
| Length | 2.05mm |
| Width | 1.25mm |
| Radiation Hardening | No |
| REACH SVHC | Unknown |
| RoHS Status | ROHS3 Compliant |
| Mount | Surface Mount |
| Mounting Type | Surface Mount |
| Package / Case | 6-TSSOP, SC-88, SOT-363 |
| Number of Pins | 6 |
| Transistor Element Material | SILICON |
| Operating Temperature | -55°C~150°C TJ |
| Packaging | Tape & Reel (TR) |
| Published | 2011 |
| Series | TrenchFET® |
| JESD-609 Code | e3 |
| Pbfree Code | yes |
| Part Status | Obsolete |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 6 |
| ECCN Code | EAR99 |
| Resistance | 85MOhm |
| Terminal Finish | PURE MATTE TIN |
| Subcategory | Other Transistors |
| Technology | MOSFET (Metal Oxide) |
| Terminal Position | DUAL |
| Terminal Form | GULL WING |
| Peak Reflow Temperature (Cel) | 260 |
| Time@Peak Reflow Temperature-Max (s) | 30 |
| Pin Count | 6 |
| Number of Elements | 1 |
| Power Dissipation-Max | 1W Ta |
| Element Configuration | Single |
| Operating Mode | ENHANCEMENT MODE |
| Power Dissipation | 1W |
| Turn On Delay Time | 600 ns |
| FET Type | P-Channel |
| Transistor Application | SWITCHING |
| Rds On (Max) @ Id, Vgs | 85m Ω @ 3.3A, 4.5V |
| Vgs(th) (Max) @ Id | 450mV @ 250μA (Min) |
| Current - Continuous Drain (Id) @ 25°C | 2.7A Ta |
| Gate Charge (Qg) (Max) @ Vgs | 8nC @ 4.5V |
| Rise Time | 1.4μs |
| Drive Voltage (Max Rds On,Min Rds On) | 1.8V 4.5V |
| Vgs (Max) | ±12V |
| Fall Time (Typ) | 1.4 μs |
| Turn-Off Delay Time | 4.9 μs |
| Continuous Drain Current (ID) | -3.3A |
| Threshold Voltage | -450mV |
| Gate to Source Voltage (Vgs) | 12V |
| Drain Current-Max (Abs) (ID) | 2.7A |
| Drain to Source Breakdown Voltage | 12V |
See Relate Datesheet