SGP10N60RUFDTU
| Parameters | |
|---|---|
| Factory Lead Time | 13 Weeks |
| Lifecycle Status | ACTIVE (Last Updated: 1 week ago) |
| Mount | Through Hole |
| Mounting Type | Through Hole |
| Package / Case | TO-220-3 |
| Weight | 1.8g |
| Transistor Element Material | SILICON |
| Operating Temperature | -55°C~150°C TJ |
| Packaging | Tube |
| Published | 2013 |
| JESD-609 Code | e3 |
| Pbfree Code | yes |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 3 |
| ECCN Code | EAR99 |
| Terminal Finish | Tin (Sn) |
| Additional Feature | LOW CONDUCTION LOSS, HIGH SPEED SWITCHING |
| HTS Code | 8541.29.00.95 |
| Subcategory | Insulated Gate BIP Transistors |
| Voltage - Rated DC | 600V |
| Max Power Dissipation | 208W |
| Current Rating | 10A |
| Base Part Number | SG*10N60 |
| JESD-30 Code | R-PSFM-T3 |
| Number of Elements | 1 |
| Element Configuration | Single |
| Power Dissipation | 75W |
| Input Type | Standard |
| Transistor Application | MOTOR CONTROL |
| Polarity/Channel Type | N-CHANNEL |
| Collector Emitter Voltage (VCEO) | 600V |
| Max Collector Current | 16A |
| Reverse Recovery Time | 42 ns |
| JEDEC-95 Code | TO-220AB |
| Collector Emitter Breakdown Voltage | 600V |
| Collector Emitter Saturation Voltage | 2.2V |
| Max Breakdown Voltage | 600V |
| Turn On Time | 49 ns |
| Test Condition | 300V, 10A, 20 Ω, 15V |
| Vce(on) (Max) @ Vge, Ic | 2.8V @ 15V, 10A |
| Turn Off Time-Nom (toff) | 284 ns |
| Gate Charge | 30nC |
| Current - Collector Pulsed (Icm) | 30A |
| Td (on/off) @ 25°C | 15ns/36ns |
| Switching Energy | 141μJ (on), 215μJ (off) |
| Gate-Emitter Voltage-Max | 20V |
| Gate-Emitter Thr Voltage-Max | 8V |
| Fall Time-Max (tf) | 220ns |
| Radiation Hardening | No |
| RoHS Status | ROHS3 Compliant |
| Lead Free | Lead Free |
See Relate Datesheet