SGF5N150UFTU
| Parameters | |
|---|---|
| Factory Lead Time | 44 Weeks |
| Lifecycle Status | ACTIVE (Last Updated: 1 week ago) |
| Mount | Through Hole |
| Mounting Type | Through Hole |
| Package / Case | TO-3P-3 Full Pack |
| Number of Pins | 3 |
| Weight | 6.962g |
| Transistor Element Material | SILICON |
| Operating Temperature | -55°C~150°C TJ |
| Packaging | Tube |
| Published | 2003 |
| JESD-609 Code | e3 |
| Pbfree Code | yes |
| Part Status | Obsolete |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 3 |
| ECCN Code | EAR99 |
| Terminal Finish | Tin (Sn) |
| Additional Feature | LOW CONDUCTION LOSS, HIGH SPEED SWITCHING |
| HTS Code | 8541.29.00.95 |
| Subcategory | Insulated Gate BIP Transistors |
| Voltage - Rated DC | 1.5kV |
| Max Power Dissipation | 62.5W |
| Current Rating | 5A |
| Number of Elements | 1 |
| Element Configuration | Single |
| Power Dissipation | 62.5W |
| Case Connection | ISOLATED |
| Input Type | Standard |
| Turn On Delay Time | 10 ns |
| Transistor Application | POWER CONTROL |
| Polarity/Channel Type | N-CHANNEL |
| Turn-Off Delay Time | 30 ns |
| Collector Emitter Voltage (VCEO) | 1.5kV |
| Max Collector Current | 10A |
| Collector Emitter Breakdown Voltage | 1.5kV |
| Voltage - Collector Emitter Breakdown (Max) | 1500V |
| Collector Emitter Saturation Voltage | 4.7V |
| Turn On Time | 25 ns |
| Test Condition | 600V, 5A, 10 Ω, 10V |
| Vce(on) (Max) @ Vge, Ic | 5.5V @ 10V, 5A |
| Turn Off Time-Nom (toff) | 100 ns |
| Gate Charge | 30nC |
| Current - Collector Pulsed (Icm) | 20A |
| Td (on/off) @ 25°C | 10ns/30ns |
| Switching Energy | 190μJ (on), 100μJ (off) |
| Gate-Emitter Voltage-Max | 20V |
| Gate-Emitter Thr Voltage-Max | 4V |
| Fall Time-Max (tf) | 120ns |
| Radiation Hardening | No |
| REACH SVHC | No SVHC |
| RoHS Status | RoHS Compliant |
| Lead Free | Lead Free |
See Relate Datesheet