SG2013J-883B
| Parameters | |
|---|---|
| Factory Lead Time | 10 Weeks |
| Lifecycle Status | IN PRODUCTION (Last Updated: 1 month ago) |
| Mount | Through Hole |
| Mounting Type | Through Hole |
| Package / Case | CDIP |
| Supplier Device Package | 16-CDIP |
| Transistor Element Material | SILICON |
| Operating Temperature | 150°C TJ |
| Packaging | Tube |
| Published | 1997 |
| JESD-609 Code | e0 |
| Pbfree Code | no |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 16 |
| ECCN Code | EAR99 |
| Terminal Finish | Tin/Lead (Sn/Pb) |
| Additional Feature | CMOS COMPATIBLE |
| Terminal Position | DUAL |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED |
| Reach Compliance Code | not_compliant |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED |
| Reference Standard | MIL-STD-883 |
| Qualification Status | Not Qualified |
| Number of Elements | 7 |
| Configuration | COMPLEX |
| Transistor Application | AMPLIFIER |
| Polarity/Channel Type | NPN |
| Transistor Type | 7 NPN Darlington |
| Collector Emitter Voltage (VCEO) | 1.9V |
| Max Collector Current | 600mA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 900 @ 500mA 2V |
| Vce Saturation (Max) @ Ib, Ic | 1.9V @ 600μA, 500mA |
| Collector Emitter Breakdown Voltage | 50V |
| Radiation Hardening | Yes |
| RoHS Status | Non-RoHS Compliant |
See Relate Datesheet