| Parameters | |
|---|---|
| Halogen Free | Halogen Free |
| Input Capacitance (Ciss) (Max) @ Vds | 1020pF @ 20V |
| Current - Continuous Drain (Id) @ 25°C | 11A Ta |
| Gate Charge (Qg) (Max) @ Vgs | 21nC @ 10V |
| Rise Time | 25ns |
| Drain to Source Voltage (Vdss) | 100V |
| Drive Voltage (Max Rds On,Min Rds On) | 4V 10V |
| Vgs (Max) | ±20V |
| Fall Time (Typ) | 55 ns |
| Turn-Off Delay Time | 105 ns |
| Continuous Drain Current (ID) | 11A |
| Gate to Source Voltage (Vgs) | 20V |
| Drain to Source Breakdown Voltage | -100V |
| Radiation Hardening | No |
| RoHS Status | RoHS Compliant |
| Lead Free | Lead Free |
| Factory Lead Time | 10 Weeks |
| Mounting Type | Through Hole |
| Package / Case | TO-251-3 Short Leads, IPak, TO-251AA |
| Surface Mount | NO |
| Number of Pins | 3 |
| Operating Temperature | 150°C TJ |
| Packaging | Bulk |
| Published | 2013 |
| JESD-609 Code | e6 |
| Pbfree Code | yes |
| Part Status | Obsolete |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| ECCN Code | EAR99 |
| Terminal Finish | Tin/Bismuth (Sn/Bi) |
| Subcategory | Other Transistors |
| Technology | MOSFET (Metal Oxide) |
| Pin Count | 3 |
| Number of Elements | 1 |
| Power Dissipation-Max | 1W Ta 35W Tc |
| Element Configuration | Single |
| Power Dissipation | 1W |
| Turn On Delay Time | 9.5 ns |
| FET Type | P-Channel |
| Rds On (Max) @ Id, Vgs | 275m Ω @ 5.5A, 10V |