SD2900
| Parameters | |
|---|---|
| Mount | Screw |
| Package / Case | M113 |
| Number of Pins | 113 |
| Packaging | Bulk |
| Part Status | Obsolete |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 4 |
| ECCN Code | EAR99 |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -65°C |
| Subcategory | FET General Purpose Power |
| Voltage - Rated DC | 65V |
| Max Power Dissipation | 21.9W |
| Terminal Position | RADIAL |
| Terminal Form | FLAT |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED |
| Current Rating | 900mA |
| Frequency | 400MHz |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED |
| Base Part Number | SD2900 |
| Pin Count | 4 |
| JESD-30 Code | O-PRFM-F4 |
| Qualification Status | Not Qualified |
| Number of Elements | 1 |
| Element Configuration | Single |
| Operating Mode | ENHANCEMENT MODE |
| Power Dissipation | 21.9W |
| Current - Test | 50mA |
| Transistor Application | AMPLIFIER |
| Drain to Source Voltage (Vdss) | 65V |
| Transistor Type | N-Channel |
| Continuous Drain Current (ID) | 900mA |
| Gate to Source Voltage (Vgs) | 20V |
| Gain | 16dB |
| Max Output Power | 5W |
| Drain Current-Max (Abs) (ID) | 0.9A |
| Drain to Source Breakdown Voltage | 65V |
| Input Capacitance | 8.5pF |
| FET Technology | METAL-OXIDE SEMICONDUCTOR |
| Voltage - Test | 28V |
| RoHS Status | ROHS3 Compliant |
| Lead Free | Lead Free |
See Relate Datesheet