| Parameters | |
|---|---|
| Mounting Type | Chassis Mount |
| Package / Case | M113 |
| Surface Mount | NO |
| Transistor Element Material | SILICON |
| Operating Temperature | 200°C |
| Packaging | Bulk |
| JESD-609 Code | e0 |
| Pbfree Code | no |
| Part Status | Obsolete |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 4 |
| ECCN Code | EAR99 |
| Terminal Finish | TIN LEAD |
| Additional Feature | WITH EMITTER BALLASTED RESISTOR |
| Subcategory | Other Transistors |
| Terminal Position | RADIAL |
| Terminal Form | FLAT |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED |
| JESD-30 Code | O-PRFM-F4 |
| Qualification Status | Not Qualified |
| Number of Elements | 1 |
| Configuration | Single |
| Power - Max | 20W |
| Transistor Application | AMPLIFIER |
| Polarity/Channel Type | NPN |
| Transistor Type | NPN |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 5 @ 250mA 5V |
| Gain | 10dB |
| Voltage - Collector Emitter Breakdown (Max) | 18V |
| Current - Collector (Ic) (Max) | 2A |
| Transition Frequency | 175MHz |
| Frequency - Transition | 175MHz |
| Power Dissipation-Max (Abs) | 20W |
| Highest Frequency Band | VERY HIGH FREQUENCY B |
| Collector-Base Capacitance-Max | 45pF |
| RoHS Status | Non-RoHS Compliant |