 
    | Parameters | |
|---|---|
| Mounting Type | Stud Mount | 
| Package / Case | M135 | 
| Surface Mount | NO | 
| Transistor Element Material | SILICON | 
| Operating Temperature | 200°C | 
| Packaging | Bulk | 
| Published | 2003 | 
| JESD-609 Code | e0 | 
| Pbfree Code | no | 
| Part Status | Obsolete | 
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) | 
| Number of Terminations | 4 | 
| ECCN Code | EAR99 | 
| Terminal Finish | TIN LEAD | 
| Additional Feature | WITH EMITTER BALLAST RESISTOR | 
| Subcategory | Other Transistors | 
| Terminal Position | RADIAL | 
| Terminal Form | FLAT | 
| Peak Reflow Temperature (Cel) | NOT SPECIFIED | 
| Reach Compliance Code | compliant | 
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | 
| Pin Count | 4 | 
| JESD-30 Code | O-PRPM-F4 | 
| Qualification Status | Not Qualified | 
| Number of Elements | 1 | 
| Configuration | SINGLE WITH BUILT-IN RESISTOR | 
| Power - Max | 10W | 
| Transistor Application | AMPLIFIER | 
| Polarity/Channel Type | NPN | 
| Transistor Type | NPN | 
| DC Current Gain (hFE) (Min) @ Ic, Vce | 35 @ 200mA 5V | 
| Gain | 10dB | 
| Voltage - Collector Emitter Breakdown (Max) | 18V | 
| Current - Collector (Ic) (Max) | 1A | 
| Transition Frequency | 108MHz | 
| Frequency - Transition | 150MHz | 
| Power Dissipation-Max (Abs) | 40W | 
| Highest Frequency Band | VERY HIGH FREQUENCY B | 
| Collector-Base Capacitance-Max | 250pF | 
| RoHS Status | Non-RoHS Compliant |