 
    | Parameters | |
|---|---|
| Mount | Chassis Mount, Stud | 
| Mounting Type | Chassis Mount | 
| Package / Case | M135 | 
| Number of Pins | 4 | 
| Transistor Element Material | SILICON | 
| Operating Temperature | 200°C TJ | 
| Packaging | Bulk | 
| Published | 2003 | 
| JESD-609 Code | e0 | 
| Pbfree Code | no | 
| Part Status | Obsolete | 
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) | 
| Number of Terminations | 4 | 
| ECCN Code | EAR99 | 
| Terminal Finish | TIN LEAD | 
| Additional Feature | WITH EMITTER BALLASTED RESISTOR | 
| Subcategory | Other Transistors | 
| Max Power Dissipation | 13W | 
| Terminal Position | RADIAL | 
| Terminal Form | FLAT | 
| Pin Count | 4 | 
| Number of Elements | 1 | 
| Configuration | SINGLE | 
| Transistor Application | AMPLIFIER | 
| Polarity/Channel Type | NPN | 
| Transistor Type | NPN | 
| Collector Emitter Voltage (VCEO) | 35V | 
| Max Collector Current | 1A | 
| DC Current Gain (hFE) (Min) @ Ic, Vce | 10 @ 200mA 5V | 
| Collector Emitter Breakdown Voltage | 35V | 
| Gain | 10dB | 
| Max Frequency | 150MHz | 
| Transition Frequency | 150MHz | 
| Frequency - Transition | 150MHz | 
| Collector Base Voltage (VCBO) | 65V | 
| Highest Frequency Band | VERY HIGH FREQUENCY B | 
| Collector-Base Capacitance-Max | 15pF | 
| Radiation Hardening | No | 
| RoHS Status | RoHS Compliant |