SCT50N120
| Parameters | |
|---|---|
| Vgs (Max) | +25V, -10V |
| Continuous Drain Current (ID) | 65A |
| Threshold Voltage | 1.8V |
| Gate to Source Voltage (Vgs) | 25V |
| Max Junction Temperature (Tj) | 200°C |
| Height | 24.45mm |
| RoHS Status | ROHS3 Compliant |
| Lead Free | Lead Free |
| Lifecycle Status | ACTIVE (Last Updated: 7 months ago) |
| Mount | Through Hole |
| Mounting Type | Through Hole |
| Package / Case | TO-247-3 |
| Manufacturer Package Identifier | HiP247-8396756 |
| Operating Temperature | -55°C~200°C TJ |
| Packaging | Tube |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Technology | SiCFET (Silicon Carbide) |
| Base Part Number | SCT50 |
| Number of Channels | 1 |
| Power Dissipation-Max | 318W Tc |
| Power Dissipation | 318W |
| FET Type | N-Channel |
| Rds On (Max) @ Id, Vgs | 69m Ω @ 40A, 20V |
| Vgs(th) (Max) @ Id | 3V @ 1mA |
| Input Capacitance (Ciss) (Max) @ Vds | 1900pF @ 400V |
| Current - Continuous Drain (Id) @ 25°C | 65A Tc |
| Gate Charge (Qg) (Max) @ Vgs | 122nC @ 20V |
| Drain to Source Voltage (Vdss) | 1200V |
| Drive Voltage (Max Rds On,Min Rds On) | 20V |
See Relate Datesheet