SCT30N120
| Parameters | |
|---|---|
| Lifecycle Status | ACTIVE (Last Updated: 8 months ago) |
| Mount | Through Hole |
| Mounting Type | Through Hole |
| Package / Case | TO-247-3 |
| Number of Pins | 247 |
| Weight | 38.000013g |
| Operating Temperature | -55°C~200°C TJ |
| Packaging | Tube |
| JESD-609 Code | e3 |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| ECCN Code | EAR99 |
| Terminal Finish | Matte Tin (Sn) - annealed |
| Subcategory | FET General Purpose Power |
| Technology | SiCFET (Silicon Carbide) |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED |
| Reach Compliance Code | not_compliant |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED |
| Base Part Number | SCT30 |
| Number of Channels | 1 |
| Power Dissipation-Max | 270W Tc |
| Element Configuration | Single |
| Power Dissipation | 175W |
| Turn On Delay Time | 19 ns |
| FET Type | N-Channel |
| Rds On (Max) @ Id, Vgs | 100m Ω @ 20A, 20V |
| Vgs(th) (Max) @ Id | 2.6V @ 1mA (Typ) |
| Input Capacitance (Ciss) (Max) @ Vds | 1700pF @ 400V |
| Current - Continuous Drain (Id) @ 25°C | 40A Tc |
| Gate Charge (Qg) (Max) @ Vgs | 105nC @ 20V |
| Rise Time | 20ns |
| Drain to Source Voltage (Vdss) | 1200V |
| Drive Voltage (Max Rds On,Min Rds On) | 20V |
| Vgs (Max) | +25V, -10V |
| Fall Time (Typ) | 28 ns |
| Turn-Off Delay Time | 45 ns |
| Continuous Drain Current (ID) | 40A |
| Threshold Voltage | 2.6V |
| Gate to Source Voltage (Vgs) | 25V |
| Drain to Source Breakdown Voltage | 1.2kV |
| REACH SVHC | No SVHC |
| RoHS Status | ROHS3 Compliant |
| Lead Free | Lead Free |
See Relate Datesheet