| Parameters | |
|---|---|
| Factory Lead Time | 4 Weeks |
| Mount | Surface Mount |
| Mounting Type | Surface Mount |
| Package / Case | SOT-563, SOT-666 |
| Number of Pins | 6 |
| Transistor Element Material | SILICON |
| Operating Temperature | 150°C TJ |
| Packaging | Cut Tape (CT) |
| Published | 2013 |
| JESD-609 Code | e6 |
| Pbfree Code | yes |
| Part Status | Obsolete |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 6 |
| Terminal Finish | Tin/Bismuth (Sn/Bi) |
| Technology | MOSFET (Metal Oxide) |
| Terminal Position | DUAL |
| Terminal Form | FLAT |
| Number of Elements | 1 |
| Configuration | SINGLE WITH BUILT-IN DIODE |
| Power Dissipation-Max | 1W Ta |
| Operating Mode | ENHANCEMENT MODE |
| Turn On Delay Time | 8.8 ns |
| FET Type | P-Channel |
| Transistor Application | SWITCHING |
| Rds On (Max) @ Id, Vgs | 84m Ω @ 1.5A, 4.5V |
| Vgs(th) (Max) @ Id | 1.3V @ 1mA |
| Input Capacitance (Ciss) (Max) @ Vds | 405pF @ 6V |
| Current - Continuous Drain (Id) @ 25°C | 3A Ta |
| Gate Charge (Qg) (Max) @ Vgs | 5.6nC @ 4.5V |
| Rise Time | 80ns |
| Drain to Source Voltage (Vdss) | 12V |
| Drive Voltage (Max Rds On,Min Rds On) | 1.5V 4.5V |
| Vgs (Max) | ±10V |
| Fall Time (Typ) | 50 ns |
| Turn-Off Delay Time | 41 ns |
| Continuous Drain Current (ID) | 3A |
| Threshold Voltage | -1.3V |
| Gate to Source Voltage (Vgs) | 10V |
| Drain Current-Max (Abs) (ID) | 3A |
| Drain-source On Resistance-Max | 0.084Ohm |
| DS Breakdown Voltage-Min | 12V |
| REACH SVHC | No SVHC |
| RoHS Status | RoHS Compliant |
| Lead Free | Lead Free |