| Parameters | |
|---|---|
| Factory Lead Time | 12 Weeks |
| Mount | Through Hole |
| Mounting Type | Through Hole |
| Package / Case | Axial, Radial Bend |
| Diode Element Material | SILICON |
| Packaging | Tape & Box (TB) |
| Published | 2013 |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 2 |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -40°C |
| Additional Feature | LOW NOISE |
| Terminal Form | WIRE |
| JESD-30 Code | O-PALF-W2 |
| Number of Elements | 1 |
| Configuration | SINGLE |
| Speed | Standard Recovery >500ns, > 200mA (Io) |
| Diode Type | Standard |
| Current - Reverse Leakage @ Vr | 10μA @ 800V |
| Voltage - Forward (Vf) (Max) @ If | 920mV @ 1.2A |
| Case Connection | ISOLATED |
| Forward Current | 1.2A |
| Operating Temperature - Junction | -40°C~150°C |
| Application | EFFICIENCY |
| Max Reverse Voltage (DC) | 800V |
| Average Rectified Current | 1.2A |
| Number of Phases | 1 |
| Reverse Recovery Time | 18 μs |
| Peak Reverse Current | 10μA |
| Max Repetitive Reverse Voltage (Vrrm) | 800V |
| Max Forward Surge Current (Ifsm) | 110A |
| Max Junction Temperature (Tj) | 150°C |
| Height | 2.9mm |
| RoHS Status | RoHS Compliant |