RU1L002SNTL
| Parameters | |
|---|---|
| Mount | Surface Mount |
| Mounting Type | Surface Mount |
| Package / Case | SC-85 |
| Number of Pins | 3 |
| Transistor Element Material | SILICON |
| Operating Temperature | 150°C TJ |
| Packaging | Digi-Reel® |
| Published | 2011 |
| Part Status | Not For New Designs |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 3 |
| ECCN Code | EAR99 |
| Technology | MOSFET (Metal Oxide) |
| Terminal Position | DUAL |
| Terminal Form | FLAT |
| Number of Elements | 1 |
| Configuration | SINGLE WITH BUILT-IN DIODE |
| Power Dissipation-Max | 200mW Ta |
| Operating Mode | ENHANCEMENT MODE |
| Turn On Delay Time | 3.5 ns |
| FET Type | N-Channel |
| Transistor Application | SWITCHING |
| Rds On (Max) @ Id, Vgs | 2.4 Ω @ 250mA, 10V |
| Vgs(th) (Max) @ Id | 2.3V @ 1mA |
| Input Capacitance (Ciss) (Max) @ Vds | 15pF @ 25V |
| Current - Continuous Drain (Id) @ 25°C | 250mA Ta |
| Rise Time | 5ns |
| Drain to Source Voltage (Vdss) | 60V |
| Drive Voltage (Max Rds On,Min Rds On) | 2.5V 10V |
| Vgs (Max) | ±20V |
| Fall Time (Typ) | 28 ns |
| Turn-Off Delay Time | 18 ns |
| Continuous Drain Current (ID) | 250mA |
| Gate to Source Voltage (Vgs) | 20V |
| Drain Current-Max (Abs) (ID) | 0.25A |
| DS Breakdown Voltage-Min | 60V |
| Radiation Hardening | No |
| RoHS Status | RoHS Compliant |
See Relate Datesheet