RSR030N06TL

RSR030N06TL

MOSFET N-CH 60V 3A TSMT3


  • Manufacturer: ROHM Semiconductor
  • Origchip NO: 687-RSR030N06TL
  • Package: SC-96
  • Datasheet: PDF
  • Stock: 305
  • Description: MOSFET N-CH 60V 3A TSMT3 (Kg)

Details

Tags

Parameters
Pin Count 3
Number of Elements 1
Power Dissipation-Max 540mW Ta
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 1W
Turn On Delay Time 8 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 85m Ω @ 3A, 10V
Vgs(th) (Max) @ Id 2.5V @ 1mA
Input Capacitance (Ciss) (Max) @ Vds 380pF @ 10V
Current - Continuous Drain (Id) @ 25°C 3A Ta
Rise Time 12ns
Drive Voltage (Max Rds On,Min Rds On) 4V 10V
Vgs (Max) ±20V
Fall Time (Typ) 10 ns
Turn-Off Delay Time 30 ns
Continuous Drain Current (ID) 3A
Gate to Source Voltage (Vgs) 20V
Drain Current-Max (Abs) (ID) 3A
Drain-source On Resistance-Max 0.105Ohm
Drain to Source Breakdown Voltage 60V
Height 950μm
Length 3mm
Width 1.8mm
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Factory Lead Time 20 Weeks
Mount Surface Mount, Through Hole
Mounting Type Surface Mount
Package / Case SC-96
Number of Pins 3
Transistor Element Material SILICON
Operating Temperature 150°C TJ
Packaging Tape & Reel (TR)
Published 2009
JESD-609 Code e1
Pbfree Code yes
Part Status Not For New Designs
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Time@Peak Reflow Temperature-Max (s) 10
See Relate Datesheet

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