| Parameters | |
|---|---|
| Factory Lead Time | 10 Weeks |
| Mount | Surface Mount |
| Mounting Type | Surface Mount |
| Package / Case | TO-252-3, DPak (2 Leads + Tab), SC-63 |
| Number of Pins | 3 |
| Transistor Element Material | SILICON |
| Operating Temperature | 150°C TJ |
| Packaging | Tape & Reel (TR) |
| Published | 2011 |
| JESD-609 Code | e2 |
| Part Status | Not For New Designs |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 2 |
| ECCN Code | EAR99 |
| Terminal Finish | Tin/Copper (Sn98Cu2) |
| Technology | MOSFET (Metal Oxide) |
| Terminal Form | GULL WING |
| Pin Count | 3 |
| JESD-30 Code | R-PSSO-G2 |
| Number of Elements | 1 |
| Number of Channels | 1 |
| Power Dissipation-Max | 20W Tc |
| Element Configuration | Single |
| Operating Mode | ENHANCEMENT MODE |
| Power Dissipation | 20W |
| Turn On Delay Time | 20 ns |
| FET Type | P-Channel |
| Transistor Application | SWITCHING |
| Rds On (Max) @ Id, Vgs | 84m Ω @ 14A, 10V |
| Vgs(th) (Max) @ Id | 3V @ 1mA |
| Input Capacitance (Ciss) (Max) @ Vds | 1900pF @ 10V |
| Current - Continuous Drain (Id) @ 25°C | 14A Ta |
| Gate Charge (Qg) (Max) @ Vgs | 27nC @ 10V |
| Rise Time | 45ns |
| Drain to Source Voltage (Vdss) | 60V |
| Drive Voltage (Max Rds On,Min Rds On) | 4V 10V |
| Vgs (Max) | ±20V |
| Fall Time (Typ) | 110 ns |
| Turn-Off Delay Time | 240 ns |
| Continuous Drain Current (ID) | 14A |
| Gate to Source Voltage (Vgs) | 20V |
| Drain to Source Breakdown Voltage | -60V |
| Pulsed Drain Current-Max (IDM) | 28A |
| Max Junction Temperature (Tj) | 150°C |
| Height | 2.65mm |
| Radiation Hardening | No |
| RoHS Status | ROHS3 Compliant |
| Lead Free | Lead Free |