RN2905T5LFT

RN2905T5LFT

Bipolar Transistors - Pre-Biased BRT PNP 2-in-1 Ic -100mA -50V VCEO


  • Manufacturer: Toshiba
  • Origchip NO: 4669-RN2905T5LFT
  • Package: SOT-363
  • Datasheet: PDF
  • Stock: 307
  • Description: Bipolar Transistors - Pre-Biased BRT PNP 2-in-1 Ic -100mA -50V VCEO (Kg)

Details

Tags

Parameters
Factory Lead Time 18 Weeks
Mount Surface Mount
Package / Case SOT-363
Packaging Cut Tape (CT)
Published 2014
Polarity PNP
Power Dissipation-Max 200mW
Element Configuration Dual
Collector Emitter Voltage (VCEO) 300mV
Max Collector Current 100mA
Collector Emitter Breakdown Voltage 50V
Max Breakdown Voltage 50V
Frequency - Transition 200MHz
Emitter Base Voltage (VEBO) -5V
hFE Min 80
Continuous Collector Current -100mA
RoHS Status RoHS Compliant
See Relate Datesheet

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