RJH60F4DPQ-A0#T0
| Parameters | |
|---|---|
| Factory Lead Time | 16 Weeks |
| Mount | Through Hole |
| Mounting Type | Through Hole |
| Package / Case | TO-247-3 |
| Number of Pins | 3 |
| Transistor Element Material | SILICON |
| Operating Temperature | 150°C TJ |
| Packaging | Tube |
| Published | 2007 |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 3 |
| ECCN Code | EAR99 |
| Subcategory | Insulated Gate BIP Transistors |
| Max Power Dissipation | 235.8W |
| Base Part Number | RJH60F |
| Pin Count | 3 |
| Number of Elements | 1 |
| Element Configuration | Single |
| Case Connection | COLLECTOR |
| Input Type | Standard |
| Power - Max | 235.8W |
| Transistor Application | POWER CONTROL |
| Polarity/Channel Type | N-CHANNEL |
| Collector Emitter Voltage (VCEO) | 600V |
| Max Collector Current | 60A |
| Reverse Recovery Time | 90 ns |
| Collector Emitter Breakdown Voltage | 600V |
| Collector Emitter Saturation Voltage | 1.7V |
| Turn On Time | 195 ns |
| Test Condition | 400V, 30A, 5 Ω, 15V |
| Vce(on) (Max) @ Vge, Ic | 1.82V @ 15V, 30A |
| Turn Off Time-Nom (toff) | 165 ns |
| IGBT Type | Trench |
| Td (on/off) @ 25°C | 45ns/85ns |
| Gate-Emitter Thr Voltage-Max | 8V |
| Radiation Hardening | No |
| RoHS Status | ROHS3 Compliant |
See Relate Datesheet