RJH60F0DPK-00#T0
| Parameters | |
|---|---|
| Factory Lead Time | 16 Weeks |
| Mount | Through Hole |
| Mounting Type | Through Hole |
| Package / Case | TO-3P-3, SC-65-3 |
| Transistor Element Material | SILICON |
| Operating Temperature | 150°C TJ |
| Packaging | Tube |
| Published | 2011 |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 3 |
| ECCN Code | EAR99 |
| Subcategory | Insulated Gate BIP Transistors |
| Max Power Dissipation | 201.6W |
| Terminal Position | SINGLE |
| Base Part Number | RJH60F |
| Pin Count | 2 |
| JESD-30 Code | R-PSFM-T3 |
| Qualification Status | Not Qualified |
| Number of Elements | 1 |
| Configuration | SINGLE WITH BUILT-IN DIODE |
| Case Connection | COLLECTOR |
| Input Type | Standard |
| Power - Max | 201.6W |
| Transistor Application | POWER CONTROL |
| Polarity/Channel Type | N-CHANNEL |
| Collector Emitter Voltage (VCEO) | 1.82V |
| Max Collector Current | 50A |
| Reverse Recovery Time | 140 ns |
| Collector Emitter Breakdown Voltage | 600V |
| Test Condition | 400V, 30A, 5 Ω, 15V |
| Vce(on) (Max) @ Vge, Ic | 1.82V @ 15V, 25A |
| IGBT Type | Trench |
| Td (on/off) @ 25°C | 46ns/70ns |
| Gate-Emitter Voltage-Max | 30V |
| Gate-Emitter Thr Voltage-Max | 8V |
| RoHS Status | ROHS3 Compliant |
See Relate Datesheet