RJ1U330AAFRGTL
| Parameters | |
|---|---|
| Factory Lead Time | 16 Weeks |
| Mounting Type | Surface Mount |
| Package / Case | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
| Surface Mount | YES |
| Transistor Element Material | SILICON |
| Manufacturer Package Identifier | LPT(S) |
| Operating Temperature | 150°C TJ |
| Packaging | Cut Tape (CT) |
| Series | Automotive, AEC-Q101 |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 2 |
| ECCN Code | EAR99 |
| Technology | MOSFET (Metal Oxide) |
| Terminal Position | SINGLE |
| Terminal Form | GULL WING |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED |
| Reach Compliance Code | not_compliant |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED |
| JESD-30 Code | R-PSSO-G2 |
| Number of Elements | 1 |
| Configuration | SINGLE WITH BUILT-IN DIODE |
| Number of Channels | 1 |
| Power Dissipation-Max | 211W Tc |
| Operating Mode | ENHANCEMENT MODE |
| Power Dissipation | 211W |
| Case Connection | DRAIN |
| Turn On Delay Time | 50 ns |
| FET Type | N-Channel |
| Transistor Application | SWITCHING |
| Rds On (Max) @ Id, Vgs | 105m Ω @ 16.5A, 10V |
| Vgs(th) (Max) @ Id | 5V @ 1mA |
| Input Capacitance (Ciss) (Max) @ Vds | 4500pF @ 25V |
| Current - Continuous Drain (Id) @ 25°C | 33A Ta |
| Gate Charge (Qg) (Max) @ Vgs | 80nC @ 10V |
| Drive Voltage (Max Rds On,Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Turn-Off Delay Time | 120 ns |
| Continuous Drain Current (ID) | 33A |
| Gate to Source Voltage (Vgs) | 30V |
| Drain to Source Breakdown Voltage | 250V |
| Avalanche Energy Rating (Eas) | 74.8 mJ |
| Max Junction Temperature (Tj) | 150°C |
| Height | 5mm |
| RoHS Status | ROHS3 Compliant |
See Relate Datesheet