| Parameters | |
|---|---|
| Number of Terminations | 2 |
| ECCN Code | EAR99 |
| Voltage - Rated | 65V |
| Current Rating (Amps) | 10μA |
| Terminal Position | DUAL |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED |
| Frequency | 2.11GHz~2.17GHz |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED |
| JESD-30 Code | R-CDFM-F2 |
| Number of Elements | 1 |
| Configuration | SINGLE |
| Operating Mode | ENHANCEMENT MODE |
| Case Connection | SOURCE |
| Current - Test | 1.6A |
| Transistor Application | AMPLIFIER |
| Polarity/Channel Type | N-CHANNEL |
| Transistor Type | LDMOS |
| Gain | 15.8dB |
| DS Breakdown Voltage-Min | 65V |
| Power - Output | 200W |
| FET Technology | METAL-OXIDE SEMICONDUCTOR |
| Voltage - Test | 30V |
| RoHS Status | RoHS Compliant |
| Factory Lead Time | 12 Weeks |
| Package / Case | 2-Flatpack, Fin Leads, Flanged |
| Surface Mount | YES |
| Transistor Element Material | SILICON |
| Packaging | Strip |
| Published | 2009 |
| Part Status | Obsolete |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |