PSMN057-200P,127
| Parameters | |
|---|---|
| Factory Lead Time | 12 Weeks |
| Mounting Type | Through Hole |
| Package / Case | TO-220-3 |
| Surface Mount | NO |
| Number of Pins | 3 |
| Transistor Element Material | SILICON |
| Operating Temperature | -55°C~175°C TJ |
| Packaging | Tube |
| Published | 2011 |
| Series | TrenchMOS™ |
| JESD-609 Code | e3 |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 3 |
| ECCN Code | EAR99 |
| Terminal Finish | Tin (Sn) |
| HTS Code | 8541.29.00.75 |
| Technology | MOSFET (Metal Oxide) |
| Pin Count | 3 |
| Number of Elements | 1 |
| Power Dissipation-Max | 250W Tc |
| Element Configuration | Single |
| Operating Mode | ENHANCEMENT MODE |
| Power Dissipation | 250W |
| Case Connection | DRAIN |
| Turn On Delay Time | 18 ns |
| FET Type | N-Channel |
| Transistor Application | SWITCHING |
| Rds On (Max) @ Id, Vgs | 57m Ω @ 17A, 10V |
| Vgs(th) (Max) @ Id | 4V @ 1mA |
| Input Capacitance (Ciss) (Max) @ Vds | 3750pF @ 25V |
| Current - Continuous Drain (Id) @ 25°C | 39A Tc |
| Gate Charge (Qg) (Max) @ Vgs | 96nC @ 10V |
| Rise Time | 58ns |
| Drive Voltage (Max Rds On,Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Fall Time (Typ) | 78 ns |
| Turn-Off Delay Time | 105 ns |
| Continuous Drain Current (ID) | 39A |
| Gate to Source Voltage (Vgs) | 20V |
| Max Dual Supply Voltage | 200V |
| Drain-source On Resistance-Max | 0.057Ohm |
| Drain to Source Breakdown Voltage | 200V |
| Pulsed Drain Current-Max (IDM) | 156A |
| Radiation Hardening | No |
| RoHS Status | ROHS3 Compliant |
| Lead Free | Lead Free |
See Relate Datesheet