| Parameters | |
|---|---|
| Factory Lead Time | 16 Weeks |
| Contact Plating | Gold |
| Mount | Surface Mount |
| Mounting Type | Surface Mount |
| Package / Case | 8-SOIC (0.154, 3.90mm Width) |
| Number of Pins | 8 |
| Supplier Device Package | 8-SO |
| Operating Temperature | -55°C~150°C TJ |
| Packaging | Tape & Reel (TR) |
| Published | 2010 |
| Series | TrenchMOS™ |
| Part Status | Obsolete |
| Moisture Sensitivity Level (MSL) | 2 (1 Year) |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Technology | MOSFET (Metal Oxide) |
| Power Dissipation-Max | 5W Tc |
| Element Configuration | Single |
| Power Dissipation | 5W |
| Turn On Delay Time | 8.5 ns |
| FET Type | P-Channel |
| Rds On (Max) @ Id, Vgs | 50mOhm @ 2.8A, 4.5V |
| Vgs(th) (Max) @ Id | 950mV @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds | 1020pF @ 20V |
| Current - Continuous Drain (Id) @ 25°C | 7.9A Tc |
| Gate Charge (Qg) (Max) @ Vgs | 10nC @ 4.5V |
| Rise Time | 7.5ns |
| Drain to Source Voltage (Vdss) | 20V |
| Drive Voltage (Max Rds On,Min Rds On) | 4.5V |
| Vgs (Max) | ±12V |
| Fall Time (Typ) | 35 ns |
| Turn-Off Delay Time | 82 ns |
| Continuous Drain Current (ID) | 7.9A |
| Gate to Source Voltage (Vgs) | 12V |
| Max Dual Supply Voltage | -20V |
| Drain to Source Breakdown Voltage | -20V |
| Input Capacitance | 1.02nF |
| Drain to Source Resistance | 50mOhm |
| Rds On Max | 10 mΩ |
| Radiation Hardening | No |
| RoHS Status | RoHS Compliant |