| Parameters | |
|---|---|
| Factory Lead Time | 4 Weeks |
| Mount | Surface Mount |
| Mounting Type | Surface Mount |
| Package / Case | 6-TSSOP, SC-88, SOT-363 |
| Number of Pins | 6 |
| Transistor Element Material | SILICON |
| Operating Temperature | -55°C~150°C TJ |
| Packaging | Tape & Reel (TR) |
| Published | 2011 |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 6 |
| Technology | MOSFET (Metal Oxide) |
| Terminal Position | DUAL |
| Terminal Form | GULL WING |
| Pin Count | 6 |
| Number of Elements | 1 |
| Configuration | SINGLE WITH BUILT-IN DIODE |
| Power Dissipation-Max | 375mW Ta 2.4W Tc |
| Operating Mode | ENHANCEMENT MODE |
| Power Dissipation | 725mW |
| Turn On Delay Time | 13 ns |
| FET Type | P-Channel |
| Transistor Application | SWITCHING |
| Rds On (Max) @ Id, Vgs | 115m Ω @ 2A, 4.5V |
| Vgs(th) (Max) @ Id | 1.15V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds | 560pF @ 10V |
| Current - Continuous Drain (Id) @ 25°C | 2A Tj |
| Gate Charge (Qg) (Max) @ Vgs | 7.2nC @ 4.5V |
| Rise Time | 35ns |
| Drain to Source Voltage (Vdss) | 20V |
| Drive Voltage (Max Rds On,Min Rds On) | 2.5V 4.5V |
| Vgs (Max) | ±12V |
| Fall Time (Typ) | 25 ns |
| Turn-Off Delay Time | 39 ns |
| Continuous Drain Current (ID) | 2A |
| Gate to Source Voltage (Vgs) | 12V |
| Drain Current-Max (Abs) (ID) | 2A |
| DS Breakdown Voltage-Min | 20V |
| Radiation Hardening | No |
| RoHS Status | ROHS3 Compliant |