| Parameters | |
|---|---|
| Factory Lead Time | 8 Weeks |
| Mount | Surface Mount |
| Mounting Type | Surface Mount |
| Package / Case | 2-XDFN |
| Number of Pins | 2 |
| Diode Element Material | SILICON |
| Packaging | Tape & Reel (TR) |
| Published | 2012 |
| JESD-609 Code | e3 |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 2 |
| Terminal Finish | Tin (Sn) |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 1.565W |
| Terminal Position | DUAL |
| Pin Count | 2 |
| Reference Standard | AEC-Q101; IEC-60134 |
| Number of Elements | 1 |
| Element Configuration | Single |
| Speed | Fast Recovery =< 500ns, > 200mA (Io) |
| Diode Type | Schottky |
| Current - Reverse Leakage @ Vr | 5μA @ 10V |
| Voltage - Forward (Vf) (Max) @ If | 610mV @ 1.5A |
| Forward Current | 1.5A |
| Operating Temperature - Junction | 150°C Max |
| Application | EFFICIENCY |
| Forward Voltage | 540mV |
| Max Reverse Voltage (DC) | 40V |
| Average Rectified Current | 1.5A |
| Number of Phases | 1 |
| Reverse Recovery Time | 4 ns |
| Peak Reverse Current | 1μA |
| Max Repetitive Reverse Voltage (Vrrm) | 40V |
| Capacitance @ Vr, F | 90pF @ 1V 1MHz |
| Peak Non-Repetitive Surge Current | 5A |
| Max Forward Surge Current (Ifsm) | 5A |
| Natural Thermal Resistance | 20 °C/W |
| Radiation Hardening | No |
| RoHS Status | ROHS3 Compliant |
| Lead Free | Lead Free |