PHT6NQ10T,135
| Parameters | |
|---|---|
| Factory Lead Time | 4 Weeks |
| Mounting Type | Surface Mount |
| Drive Voltage (Max Rds On,Min Rds On) | 10V |
| Package / Case | TO-261-4, TO-261AA |
| Vgs (Max) | ±20V |
| Surface Mount | YES |
| Fall Time (Typ) | 15 ns |
| Number of Pins | 4 |
| Turn-Off Delay Time | 20 ns |
| Continuous Drain Current (ID) | 3A |
| Transistor Element Material | SILICON |
| Gate to Source Voltage (Vgs) | 20V |
| Operating Temperature | -65°C~150°C TJ |
| Max Dual Supply Voltage | 100V |
| Packaging | Tape & Reel (TR) |
| Drain Current-Max (Abs) (ID) | 3A |
| Drain-source On Resistance-Max | 0.09Ohm |
| Published | 1999 |
| Drain to Source Breakdown Voltage | 100V |
| Pulsed Drain Current-Max (IDM) | 26A |
| Series | TrenchMOS™ |
| Height | 1.7mm |
| JESD-609 Code | e3 |
| Length | 6.7mm |
| Part Status | Active |
| Width | 3.7mm |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Radiation Hardening | No |
| Number of Terminations | 4 |
| RoHS Status | ROHS3 Compliant |
| Lead Free | Lead Free |
| ECCN Code | EAR99 |
| Terminal Finish | Tin (Sn) |
| Technology | MOSFET (Metal Oxide) |
| Terminal Position | DUAL |
| Terminal Form | GULL WING |
| Peak Reflow Temperature (Cel) | 260 |
| Time@Peak Reflow Temperature-Max (s) | 30 |
| Pin Count | 4 |
| Number of Elements | 1 |
| Power Dissipation-Max | 1.8W Ta 8.3W Tc |
| Element Configuration | Single |
| Operating Mode | ENHANCEMENT MODE |
| Power Dissipation | 1.8W |
| Case Connection | DRAIN |
| Turn On Delay Time | 6 ns |
| FET Type | N-Channel |
| Transistor Application | SWITCHING |
| Rds On (Max) @ Id, Vgs | 90m Ω @ 3A, 10V |
| Vgs(th) (Max) @ Id | 4V @ 1mA |
| Input Capacitance (Ciss) (Max) @ Vds | 633pF @ 25V |
| Current - Continuous Drain (Id) @ 25°C | 3A Ta |
| Gate Charge (Qg) (Max) @ Vgs | 21nC @ 10V |
| Rise Time | 15ns |
See Relate Datesheet