PHT4NQ10T,135
| Parameters | |
|---|---|
| Power Dissipation-Max | 6.9W Tc |
| Operating Mode | ENHANCEMENT MODE |
| Power Dissipation | 6.9W |
| Case Connection | DRAIN |
| Turn On Delay Time | 8 ns |
| FET Type | N-Channel |
| Transistor Application | SWITCHING |
| Rds On (Max) @ Id, Vgs | 250m Ω @ 1.75A, 10V |
| Vgs(th) (Max) @ Id | 4V @ 1mA |
| Input Capacitance (Ciss) (Max) @ Vds | 300pF @ 25V |
| Current - Continuous Drain (Id) @ 25°C | 3.5A Tc |
| Gate Charge (Qg) (Max) @ Vgs | 7.4nC @ 10V |
| Rise Time | 13ns |
| Factory Lead Time | 6 Weeks |
| Drive Voltage (Max Rds On,Min Rds On) | 10V |
| Mounting Type | Surface Mount |
| Vgs (Max) | ±20V |
| Package / Case | TO-261-4, TO-261AA |
| Fall Time (Typ) | 11 ns |
| Surface Mount | YES |
| Turn-Off Delay Time | 20 ns |
| Number of Pins | 4 |
| Continuous Drain Current (ID) | 3.5A |
| Weight | 4.535924g |
| Threshold Voltage | 3V |
| Transistor Element Material | SILICON |
| Gate to Source Voltage (Vgs) | 20V |
| Operating Temperature | -65°C~150°C TJ |
| Max Dual Supply Voltage | 100V |
| Packaging | Tape & Reel (TR) |
| Drain to Source Breakdown Voltage | 100V |
| Published | 1997 |
| Height | 6.35mm |
| Series | TrenchMOS™ |
| Length | 6.35mm |
| Width | 6.35mm |
| JESD-609 Code | e3 |
| Part Status | Obsolete |
| Radiation Hardening | No |
| REACH SVHC | No SVHC |
| RoHS Status | ROHS3 Compliant |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 4 |
| Lead Free | Lead Free |
| Resistance | 250MOhm |
| Terminal Finish | Tin (Sn) |
| Technology | MOSFET (Metal Oxide) |
| Terminal Position | DUAL |
| Terminal Form | GULL WING |
| Peak Reflow Temperature (Cel) | 260 |
| Time@Peak Reflow Temperature-Max (s) | 30 |
| Pin Count | 4 |
| Number of Elements | 1 |
| Configuration | SINGLE WITH BUILT-IN DIODE |
See Relate Datesheet