| Parameters | |
|---|---|
| Factory Lead Time | 16 Weeks |
| Mounting Type | Surface Mount |
| Package / Case | 8-SOIC (0.154, 3.90mm Width) |
| Surface Mount | YES |
| Number of Pins | 8 |
| Transistor Element Material | SILICON |
| Operating Temperature | 150°C TJ |
| Packaging | Tape & Reel (TR) |
| Published | 2011 |
| JESD-609 Code | e4 |
| Part Status | Obsolete |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 8 |
| Terminal Finish | Nickel/Palladium/Gold (Ni/Pd/Au) |
| Max Power Dissipation | 2W |
| Terminal Form | GULL WING |
| Peak Reflow Temperature (Cel) | 260 |
| Time@Peak Reflow Temperature-Max (s) | 30 |
| Pin Count | 8 |
| Number of Elements | 2 |
| Configuration | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE |
| Power Dissipation | 2W |
| FET Type | 2 P-Channel (Dual) |
| Transistor Application | SWITCHING |
| Rds On (Max) @ Id, Vgs | 250m Ω @ 1A, 10V |
| Vgs(th) (Max) @ Id | 2.8V @ 1mA |
| Input Capacitance (Ciss) (Max) @ Vds | 250pF @ 20V |
| Gate Charge (Qg) (Max) @ Vgs | 25nC @ 10V |
| Drain to Source Voltage (Vdss) | 30V |
| Continuous Drain Current (ID) | 2.3A |
| JEDEC-95 Code | MS-012AA |
| Gate to Source Voltage (Vgs) | 20V |
| Max Dual Supply Voltage | -30V |
| Drain to Source Breakdown Voltage | -30V |
| FET Feature | Logic Level Gate |
| Radiation Hardening | No |
| RoHS Status | RoHS Compliant |
| Lead Free | Lead Free |