PD20010S-E
| Parameters | |
|---|---|
| Mount | Surface Mount |
| Package / Case | PowerSO-10RF Exposed Bottom Pad (2 Straight Leads) |
| Number of Pins | 3 |
| Packaging | Tube |
| Part Status | Obsolete |
| Moisture Sensitivity Level (MSL) | 3 (168 Hours) |
| Number of Terminations | 2 |
| ECCN Code | EAR99 |
| Max Operating Temperature | 165°C |
| Min Operating Temperature | -65°C |
| Additional Feature | ESD PROTECTION, HIGH RELIABILITY |
| Subcategory | FET General Purpose Power |
| Max Power Dissipation | 59W |
| Terminal Position | DUAL |
| Terminal Form | FLAT |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED |
| Current Rating | 5A |
| Frequency | 2GHz |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED |
| Base Part Number | PD20010 |
| Pin Count | 10 |
| JESD-30 Code | R-PDFP-F2 |
| Qualification Status | Not Qualified |
| Number of Elements | 1 |
| Element Configuration | Single |
| Operating Mode | ENHANCEMENT MODE |
| Power Dissipation | 59W |
| Case Connection | SOURCE |
| Current - Test | 150mA |
| Transistor Application | AMPLIFIER |
| Drain to Source Voltage (Vdss) | 40V |
| Polarity/Channel Type | N-CHANNEL |
| Transistor Type | LDMOS |
| Continuous Drain Current (ID) | 5A |
| Gate to Source Voltage (Vgs) | 15V |
| Gain | 11dB |
| Max Output Power | 15W |
| Drain Current-Max (Abs) (ID) | 5A |
| Drain to Source Breakdown Voltage | 40V |
| Power - Output | 10W |
| FET Technology | METAL-OXIDE SEMICONDUCTOR |
| Voltage - Test | 13.6V |
| RoHS Status | ROHS3 Compliant |
See Relate Datesheet