NVB6411ANT4G

NVB6411ANT4G

MOSFET NFET D2PAK 100V 75A 16MO


  • Manufacturer: ON Semiconductor
  • Origchip NO: 598-NVB6411ANT4G
  • Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
  • Datasheet: PDF
  • Stock: 695
  • Description: MOSFET NFET D2PAK 100V 75A 16MO (Kg)

Details

Tags

Parameters
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Fall Time (Typ) 157 ns
Turn-Off Delay Time 107 ns
Continuous Drain Current (ID) 77A
Gate to Source Voltage (Vgs) 20V
Drain-source On Resistance-Max 0.014Ohm
Pulsed Drain Current-Max (IDM) 285A
DS Breakdown Voltage-Min 100V
Avalanche Energy Rating (Eas) 470 mJ
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Factory Lead Time 25 Weeks
Lifecycle Status ACTIVE, NOT REC (Last Updated: 2 days ago)
Mounting Type Surface Mount
Package / Case TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Surface Mount YES
Number of Pins 3
Transistor Element Material SILICON
Operating Temperature -55°C~175°C TJ
Packaging Tape & Reel (TR)
Published 2009
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2
ECCN Code EAR99
Terminal Finish Tin (Sn)
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Terminal Form GULL WING
Pin Count 3
Reference Standard AEC-Q101
JESD-30 Code R-PSSO-G2
Number of Elements 1
Power Dissipation-Max 217W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Case Connection DRAIN
Turn On Delay Time 16 ns
FET Type N-Channel
Rds On (Max) @ Id, Vgs 14m Ω @ 72A, 10V
Vgs(th) (Max) @ Id 4V @ 250μA
Halogen Free Halogen Free
Input Capacitance (Ciss) (Max) @ Vds 3700pF @ 25V
Current - Continuous Drain (Id) @ 25°C 77A Tc
Gate Charge (Qg) (Max) @ Vgs 100nC @ 10V
Rise Time 144ns
Drain to Source Voltage (Vdss) 100V
See Relate Datesheet

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