NTMSD3P102R2SG
| Parameters | |
|---|---|
| Drive Voltage (Max Rds On,Min Rds On) | 4.5V 10V |
| Vgs (Max) | ±20V |
| Fall Time (Typ) | 35 ns |
| Turn-Off Delay Time | 32 ns |
| Continuous Drain Current (ID) | 2.34A |
| Gate to Source Voltage (Vgs) | 20V |
| Drain-source On Resistance-Max | 0.085Ohm |
| Drain to Source Breakdown Voltage | -20V |
| FET Feature | Schottky Diode (Isolated) |
| Feedback Cap-Max (Crss) | 135 pF |
| Radiation Hardening | No |
| RoHS Status | RoHS Compliant |
| Lead Free | Lead Free |
| Mount | Surface Mount |
| Mounting Type | Surface Mount |
| Package / Case | 8-SOIC (0.154, 3.90mm Width) |
| Packaging | Tape & Reel (TR) |
| Published | 2007 |
| Series | FETKY™ |
| JESD-609 Code | e3 |
| Pbfree Code | yes |
| Part Status | Obsolete |
| Moisture Sensitivity Level (MSL) | 3 (168 Hours) |
| Number of Terminations | 8 |
| ECCN Code | EAR99 |
| Terminal Finish | Tin (Sn) |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Subcategory | Other Transistors |
| Voltage - Rated DC | -20V |
| Technology | MOSFET (Metal Oxide) |
| Terminal Position | DUAL |
| Terminal Form | GULL WING |
| Current Rating | -3.05A |
| Pin Count | 8 |
| JESD-30 Code | R-PDSO-G8 |
| Number of Elements | 1 |
| Configuration | SINGLE WITH BUILT-IN DIODE |
| Power Dissipation-Max | 730mW Ta |
| Operating Mode | ENHANCEMENT MODE |
| Power Dissipation | 2W |
| FET Type | P-Channel |
| Transistor Application | SWITCHING |
| Rds On (Max) @ Id, Vgs | 85m Ω @ 3.05A, 10V |
| Vgs(th) (Max) @ Id | 2.5V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds | 750pF @ 16V |
| Current - Continuous Drain (Id) @ 25°C | 2.34A Ta |
| Gate Charge (Qg) (Max) @ Vgs | 25nC @ 10V |
| Rise Time | 42ns |
See Relate Datesheet